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| Semiconductor SDS511Q Switching Diode Features * * * * Ultra high speed switching application Low forward voltage Fast reverse recovery time Small total capacitance Ordering Information Type No. SDS511Q Marking S1 Package Code SOD-523 Outline Dimensions 1.60.1 1.20.1 unit : mm 0.80.1 0.2 Min. 2 1 2 1 0.60.1 0~0.1 PIN Connections 1. Anode 2. Cathode KSD-E001-001 1 SDS511Q Absolute maximum ratings Characteristic Maximum(peak) reverse voltage Reverse voltage Maximum(peak) forward current Average forward current Surge current(10ms) Power dissipation Junction temperature Storage temperature Ta=25C Symbol VRM VR IFM IO IFSM PD Tj Tstg Ratings 85 80 300 100 2 150 150 -55 ~ 150 Unit V V mA mA A mW C C Electrical Characteristics Characteristic Forward voltage Ta=25C Symbol VF(1) VF(2) VF(3) IR CT Test Condition IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA Min. Typ. Max. 0.6 0.7 0.9 2.2 1.6 1.2 0.5 4.0 4.0 Unit V Reverse current Total capacitance Reverse recovery time A pF trr ns KSD-E001-001 2 SDS511Q Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR-VR Fig. 3 CT-VR Fig. 4 trr-IF Fig. 5 Reverse recovery time(trr) test circuit KSD-E001-001 3 |
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